BC17x, BC25x - The beginnings of production in Romania, IPRS Baneasa

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Manufacture of silicon semiconductor devices at IPRS Baneasa

Section 2500, hereinafter referred to as "Silicon Transistor and Small Signal Diode Factory", was the last production unit established in IPRS Baneasa in 1974, to deliver discrete silicon devices mainly requested by ELECTRONICA for the manufacture of radio and TV sets.

Like the other production sections in IPRS Baneasa, the 2500 department started production by purchasing two important licenses: the license for the manufacture of Varicap diodes from the company ITT-Intermetall from Freiburg, Germany and license for the production of 2N3055, power transistors from Solitron Devices Inc, West Palm Beach, USA.

Both licenses included technology and equipment for the manufacture of silicon microchips, their encapsulation and final electrical testing. Starting from this technological base, the technical staff of Section 2500 designed, developed and put into production a wide range of silicon semiconductor devices.

The beginnings of the production of BC17x, BC25x transistor families in Romania

During the same start-up period, much effort was made to develop the first low-power transistor chips: NPN (BC170) and type PNP (BC250).

At first, this task seemed relatively straightforward, consisting of adding an extra basic diffusion as an evolution of the process from the licensed process for the varicap diode.

But this proved to be a real challenge. The reason was high sensitivity of the doped transistor base, crystal defects and ionic oxide contamination, much higher than at the junction of the highly doped diode.

Problems encountered at the beginning of the manufacture of the BC170, BC250 transistor family

For NPN transistors, the main problem was the extremely low current gain, of only a few units, at low collector currents (10 μA) and for the PNP ones the parasitic channels in the base-collector junction.

IPRS management (general manager Eng. Anton Vatasescu) put researchers under constant pressure due to strong demand from the main client, ELECTRONICA company.

Finally, an "experiment design" process yielded the specified parameters and several low power transistor families could be qualified and delivered to eager customers.

The first NPN transistors (BC17x family) were developed by Eng. Nicolae Camen and the first PNP transistors (BC25x family) of Eng. Sorin Georgescu.

Technical characteristics of BC170, BC170A, BC170B, BC170C

Technical specificationsBC170BC170ABC170BBC170C
Material of TransistorSiSiSiSi
PolarityNPNNPNNPNNPN
Maximum Collector Power Dissipation (Pc)0.3 W0.3 W0.3 W0.3 W
Maximum Collector-Base Voltage | Vcb |20 V20 V20 V20 V
Maximum Collector-Emitter Voltage | Vce |20 V20 V20 V20 V
Maximum Emitter-Base Voltage | Web |5 V5 V5 V5 V
Maximum Collector Current | Ic max |A 0.1A 0.1A 0.1A 0.1
Max. Operating Junction Temperature (Tj)150 ° C150 ° C150 ° C150 ° C
Transition Frequency (ft)60 MHz60 MHz60 MHz60 MHz
Capacitance Collector (Cc)8 pF8 pF8 pF8 pF
Forward Current Transfer Ratio (hFE), MIN353580200
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Technical characteristics of BC171, BC171A, BC171B, BC171C

Technical specificationsBC171BC171ABC171BBC171C
Material of TransistorSiSiSiSi
PolarityNPNNPNNPNNPN
Maximum Collector Power Dissipation (Pc)0.3 W0.3 W0.3 W0.3 W
Maximum Collector-Base Voltage | Vcb |45 V45 V45 V45 V
Maximum Collector-Emitter Voltage | Vce |45 V45 V45 V45 V
Maximum Emitter-Base Voltage | Web |6 V6 V6 V6 V
Maximum Collector Current | Ic max |A 0.1A 0.1A 0.1A 0.1
Max. Operating Junction Temperature (Tj)150 ° C150 ° C150 ° C150 ° C
Transition Frequency (ft)100 MHz100 MHz100 MHz100 MHz
Capacitance Collector (Cc)6 pF6 pF6 pF6 pF
Forward Current Transfer Ratio (hFE), MIN125125240450
Package Retro American Diner Chair TO92 Retro American Diner Chair TO92 Retro American Diner Chair TO92 Retro American Diner Chair TO92

Technical characteristics of BC172, BC172A, BC172B, BC172C

Technical specificationsBC172BC172ABC172BBC172C
Material of TransistorSiSiSiSi
PolarityNPNNPNNPNNPN
Maximum Collector Power Dissipation (Pc)0.3 W0.3 W0.3 W0.3 W
Maximum Collector-Base Voltage | Vcb |25 V25 V25 V25 V
Maximum Collector-Emitter Voltage | Vce |25 V25 V25 V25 V
Maximum Emitter-Base Voltage | Web |5V5V5V5V
Maximum Collector Current | Ic max |A 0.1A 0.1A 0.1A 0.1
Max. Operating Junction Temperature (Tj)150 ° C150 ° C150 ° C150 ° C
Transition Frequency (ft)100 MHz100 MHz100 MHz100 MHz
Capacitance Collector (Cc)6 pF6 pF6 pF6 pF
Forward Current Transfer Ratio (hFE), MIN125125240450
Package Retro American Diner Chair TO92 Retro American Diner Chair TO92 Retro American Diner Chair TO92 Retro American Diner Chair TO92

Technical characteristics of BC173, BC173A, BC173B, BC173C

Technical specificationsBC173BC173ABC173BBC173C
Material of TransistorSiSiSiSi
PolarityNPNNPNNPNNPN
Maximum Collector Power Dissipation (Pc)0.3 W0.3 W0.3 W0.3 W
Maximum Collector-Base Voltage | Vcb |25 V25 V25 V25 V
Maximum Collector-Emitter Voltage | Vce |25 V25 V25 V25 V
Maximum Emitter-Base Voltage | Web |5V5V5V5V
Maximum Collector Current | Ic max |A 0.1A 0.1A 0.1A 0.1
Max. Operating Junction Temperature (Tj)150 ° C150 ° C150 ° C150 ° C
Transition Frequency (ft)150 MHz150 MHz150 MHz150 MHz
Capacitance Collector (Cc)6 pF6 pF6 pF6 pF
Forward Current Transfer Ratio (hFE), MIN125125240450
Package Retro American Diner Chair TO92 Retro American Diner Chair TO92 Retro American Diner Chair TO92 Retro American Diner Chair TO92

Technical characteristics of BC174, BC174A, BC174B

Technical specificationsBC174BC174ABC174B
Material of TransistorSiSiSi
PolarityNPNNPNNPN
Maximum Collector Power Dissipation (Pc)0.3 W0.3 W0.3 W
Maximum Collector-Base Voltage | Vcb |64 V64 V64 V
Maximum Collector-Emitter Voltage | Vce |64 V64 V64 V
Maximum Emitter-Base Voltage | Web |5V5V5V
Maximum Collector Current | Ic max |A 0.1A 0.1A 0.1
Max. Operating Junction Temperature (Tj)150 ° C150 ° C150 ° C
Transition Frequency (ft)100 MHz100 MHz100 MHz
Capacitance Collector (Cc)6 pF6 pF6 pF
Forward Current Transfer Ratio (hFE), MIN125125240
Package Retro American Diner Chair TO92 Retro American Diner Chair TO92 Retro American Diner Chair TO92

Technical characteristics of BC175

Technical specificationsBC175
Material of TransistorSi
PolarityNPN
Maximum Collector Power Dissipation (Pc)0.3 W
Maximum Collector-Base Voltage | Vcb |30 V
Maximum Collector-Emitter Voltage | Vce |30 V
Maximum Emitter-Base Voltage | Web |5V
Maximum Collector Current | Ic max |A 0.1
Max. Operating Junction Temperature (Tj)125 ° C
Transition Frequency (ft)150 MHz
Forward Current Transfer Ratio (hFE), MIN100
Package Retro American Diner Chair TO92

Technical characteristics of BC177, BC177A, BC177AP, BC177B, BC177BP, BC177C, BC177CSM, BC177DCSM, BC177P, BC177V, BC177VI

Technical specificationsBC177BC177ABC177APBC177BBC177BPBC177CBC177CSMBC177DCSMBC177PBC177VBC177VI
Material of TransistorSiSiSiSiSiSiSiSiSiSiSi
PolarityPNPPNPPNPPNPPNPPNPPNPPNPPNPPNPPNP
Maximum Collector Power Dissipation (Pc)0.3 W0.3 W0.3 W0.3 W0.3 W0.3 W0.3 W0.3 W0.3 W0.3 W0.3 W
Maximum Collector-Base Voltage | Vcb |45 V45 V45 V45 V45 V45 V45 V45 V45 V45 V45 V
Maximum Collector-Emitter Voltage | Vce |45 V45 V45 V45 V45 V45 Vdoes not datedoes not date45 V45 V45 V
Maximum Emitter-Base Voltage | Web |5V5V5V5V5V5Vdoes not datedoes not date5V5V5V
Maximum Collector Current | Ic max |A 0.1A 0.1A 0.1A 0.1A 0.1A 0.1A 0.1A 0.1A 0.1A 0.1A 0.1
Max. Operating Junction Temperature (Tj)175 ° C175 ° C175 ° C175 ° C175 ° C175 ° Cdoes not datedoes not date175 ° C175 ° C175 ° C
Transition Frequency (ft)130 MHz130 MHz130 MHz130 MHz130 MHz100 MHz130 MHz130 MHz130 MHz130 MHz130 MHz
Capacitance Collector (Cc)7 pF7 pF7 pF7 pF7 pF7 pFdoes not datedoes not date7 pF7 pF7 pF
Forward Current Transfer Ratio (hFE), MIN70120120180180380180180705075
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Technical characteristics of BC178, BC178A, BC178AP, BC178B, BC178BP, BC178C, BC178CP, BC178P, BC178V, BC178VI

Technical specificationsBC178BC178ABC178APBC178BBC178BPBC178CBC178CPBC178PBC178VBC178VI
Material of TransistorSiSiSiSiSiSiSiSiSiSi
PolarityPNPPNPPNPPNPPNPPNPPNPPNPPNPPNP
Maximum Collector Power Dissipation (Pc)0.3 W0.3 W0.3 W0.3 W0.3 W0.3 W0.3 W0.3 W0.3 W0.3 W
Maximum Collector-Base Voltage | Vcb |30 V30 V30 V30 V30 V30 V30 V30 V30 V30 V
Maximum Collector-Emitter Voltage | Vce |25 V25 V25 V25 V25 V25 V25 V25 V25 V25 V
Maximum Emitter-Base Voltage | Web |5V5V5V5V5V5V5V5V5V5V
Maximum Collector Current | Ic max |A 0.2A 0.2A 0.2A 0.2A 0.2A 0.2A 0.2A 0.2A 0.2A 0.2
Max. Operating Junction Temperature (Tj)175 ° C175 ° C175 ° C175 ° C175 ° C175 ° C175 ° C175 ° C175 ° C175 ° C
Transition Frequency (ft)100 MHz100 MHz100 MHz100 MHz100 MHz100 MHz100 MHz100 MHz100 MHz100 MHz
Capacitance Collector (Cc)7 pF7 pF7 pF7 pF7 pF7 pF7 pF7 pF7 pF7 pF
Forward Current Transfer Ratio (hFE), MIN70120125180240350450755075
Package Retro American Diner Chair TO18 Retro American Diner Chair TO18T092T018T092T018T092T092T092T018

Technical characteristics of BC179, BC179A, BC179AP, BC179B, BC179BP, BC179C, BC179CP, BC179P, BC179V, BC179VI

Technical specificationsBC179BC179ABC179APBC179BBC179BPBC179CBC179CPBC179PBC179VBC179VI
Material of TransistorSiSiSiSiSiSiSiSiSiSi
PolarityPNPPNPPNPPNPPNPPNPPNPPNPPNPPNP
Maximum Collector Power Dissipation (Pc)0.3 W0.3 W0.3 W0.3 W0.3 W0.3 W0.3 W0.3 W0.3 W0.3 W
Maximum Collector-Base Voltage | Vcb |25 V25 V25 V25 V25 V25 V25 V25 V25 V25 V
Maximum Collector-Emitter Voltage | Vce |20 V20 V20 V20 V20 V20 V20 V20 V20 V20 V
Maximum Emitter-Base Voltage | Web |5V5V5V5V5V5V5V5V5V5V
Maximum Collector Current | Ic max |A 0.05A 0.05A 0.05A 0.05A 0.05A 0.05A 0.05A 0.05A 0.05A 0.05
Max. Operating Junction Temperature (Tj)175 ° C175 ° C175 ° C175 ° C175 ° C175 ° C175 ° C175 ° C175 ° C175 ° C
Transition Frequency (ft)100 MHz100 MHz100 MHz100 MHz100 MHz100 MHz100 MHz100 MHz100 MHz100 MHz
Capacitance Collector (Cc)7 pF7 pF7 pF7 pF7 pF7 pF7 pF7 pF7 pF7 pF
Forward Current Transfer Ratio (hFE), MIN70120120180180380380706075
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Technical characteristics of BC250, BC250A, BC250B, BC250C

Technical specificationsBC250BC250ABC250BBC250C
Material of TransistorSiSiSiSi
PolarityPNPPNPPNPPNP
Maximum Collector Power Dissipation (Pc)0.3 W0.3 W0.3 W0.3 W
Maximum Collector-Base Voltage | Vcb |20 V20 V20 V20 V
Maximum Collector-Emitter Voltage | Vce |20 V20 V20 V20 V
Maximum Emitter-Base Voltage | Web |5V5V5V5V
Maximum Collector Current | Ic max |A 0.1A 0.1A 0.1A 0.1
Max. Operating Junction Temperature (Tj)150 ° C150 ° C150 ° C150 ° C
Transition Frequency (ft)100 MHz100 MHz100 MHz100 MHz
Capacitance Collector (Cc)6 pF6 pF6 pF6 pF
Forward Current Transfer Ratio (hFE), MIN353580200
Package Retro American Diner Chair TO92 Retro American Diner Chair TO92 Retro American Diner Chair TO92 Retro American Diner Chair TO92

Technical characteristics of BC251, BC251A, BC251B, BC251C, BC251CA

Technical specificationsBC251BC251ABC251BBC251CBC251CA
Material of TransistorSiSiSiSiSi
PolarityPNPPNPPNPPNPPNP
Maximum Collector Power Dissipation (Pc)0.3 W0.3 W0.3 W0.3 W0.25 W
Maximum Collector-Base Voltage | Vcb |45 V45 V45 V45 V45 V
Maximum Collector-Emitter Voltage | Vce |45 V45 V45 V45 V45 V
Maximum Emitter-Base Voltage | Web |5V5V5V5V5V
Maximum Collector Current | Ic max |A 0.1A 0.1A 0.1A 0.1A 0.05
Max. Operating Junction Temperature (Tj)125 ° C150 ° C150 ° C150 ° C150 ° C
Transition Frequency (ft)100 MHz80 MHz80 MHz80 MHz50 MHz
Capacitance Collector (Cc)6 pF6 pF6 pF6 pF6 pF
Forward Current Transfer Ratio (hFE), MIN125120240450450
Package Retro American Diner Chair TO92 Retro American Diner Chair TO92 Retro American Diner Chair TO92 Retro American Diner Chair TO92 Retro American Diner Chair TO106

Technical characteristics of BC252, BC252A, BC252B, BC252C, BC252CA

Technical specificationsBC252BC252ABC252BBC252CBC252CA
Material of TransistorSiSiSiSiSi
PolarityPNPPNPPNPPNPPNP
Maximum Collector Power Dissipation (Pc)0.3 W0.3 W0.3 W0.3 W0.25 W
Maximum Collector-Base Voltage | Vcb |20 V25 V25 V25 V25 V
Maximum Collector-Emitter Voltage | Vce |20 V25 V25 V25 V25 V
Maximum Emitter-Base Voltage | Web |5V5V5V5V5V
Maximum Collector Current | Ic max |A 0.1A 0.1A 0.1A 0.1A 0.05
Max. Operating Junction Temperature (Tj)125 ° C150 ° C150 ° C150 ° C150 ° C
Transition Frequency (ft)80 MHz80 MHz80 MHz80 MHz80 MHz
Capacitance Collector (Cc)6 pF6 pF6 pF6 pF6 pF
Forward Current Transfer Ratio (hFE), MIN125120250450450
Package Retro American Diner Chair TO92 Retro American Diner Chair TO92 Retro American Diner Chair TO92 Retro American Diner Chair TO92 Retro American Diner Chair TO106

Technical characteristics of BC253, BC253A, BC253B, BC253C, BC253CA

Technical specificationsBC253BC253ABC253BBC253CBC253CA
Material of TransistorSiSiSiSiSi
PolarityPNPPNPPNPPNPPNP
Maximum Collector Power Dissipation (Pc)0.3 W0.3 W0.3 W0.3 W0.25 W
Maximum Collector-Base Voltage | Vcb |20 V25 V25 V25 V25 V
Maximum Collector-Emitter Voltage | Vce |20 V25 V25 V25 V25 V
Maximum Emitter-Base Voltage | Web |5V5V5V5V5V
Maximum Collector Current | Ic max |A 0.1A 0.1A 0.1A 0.1A 0.05
Max. Operating Junction Temperature (Tj)125 ° C150 ° C150 ° C150 ° C150 ° C
Transition Frequency (ft)80 MHz80 MHz80 MHz80 MHz50 MHz
Capacitance Collector (Cc)6 pF6 pF6 pF6 pF6 pF
Forward Current Transfer Ratio (hFE), MIN125120240450450
Package Retro American Diner Chair TO92 Retro American Diner Chair TO92 Retro American Diner Chair TO92 Retro American Diner Chair TO92 Retro American Diner Chair TO106

Technical characteristics of BC254, BC254A

Technical specificationsBC254BC254A
Material of TransistorSiSi
PolarityPNPPNP
Maximum Collector Power Dissipation (Pc)0.25 W0.3 W
Maximum Collector-Base Voltage | Vcb |100 V30 V
Maximum Collector-Emitter Voltage | Vce |55 V25 V
Maximum Emitter-Base Voltage | Web |5V5V
Maximum Collector Current | Ic max |A 0.05A 0.1
Max. Operating Junction Temperature (Tj)150 ° C150 ° C
Transition Frequency (ft)does not date60 MHz
Capacitance Collector (Cc)does not date10 pF
Forward Current Transfer Ratio (hFE), MIN50150
Package Retro American Diner Chair TO92 Retro American Diner Chair TO18

Technical characteristics of BC255, BC255A

Technical specificationsBC255BC255A
Material of TransistorSiSi
PolarityNPNNPN
Maximum Collector Power Dissipation (Pc)0.625 W0.3 W
Maximum Collector-Base Voltage | Vcb |100 V30 V
Maximum Collector-Emitter Voltage | Vce |55 V25 V
Maximum Emitter-Base Voltage | Web |5V5V
Maximum Collector Current | Ic max |A 0.03A 0.1
Max. Operating Junction Temperature (Tj)175 ° C175 ° C
Transition Frequency (ft)does not date60 MHz
Capacitance Collector (Cc)10 pF10 pF
Forward Current Transfer Ratio (hFE), MIN50235
Package Retro American Diner Chair TO92 Retro American Diner Chair TO18

Technical characteristics of BC256, BC256A, BC256B

Technical specificationsBC256BC256ABC256B
Material of TransistorSiSiSi
PolarityPNPPNPPNP
Maximum Collector Power Dissipation (Pc)0.3 W0.3 W0.3 W
Maximum Collector-Base Voltage | Vcb |64 V64 V64 V
Maximum Collector-Emitter Voltage | Vce |64 V64 V64 V
Maximum Emitter-Base Voltage | Web |5V5V5V
Maximum Collector Current | Ic max |A 0.1A 0.1A 0.1
Max. Operating Junction Temperature (Tj)150 ° C150 ° C150 ° C
Transition Frequency (ft)100 MHz75 MHz75 MHz
Capacitance Collector (Cc)6 pF6 pF6 pF
Forward Current Transfer Ratio (hFE), MIN125120240
Package Retro American Diner Chair TO92 Retro American Diner Chair TO92 Retro American Diner Chair TO92

Technical characteristics of BC257, BC257A, BC257B, BC257V, BC257VI

Technical specificationsBC257BC257ABC257BBC257VBC257VI
Material of TransistorSiSiSiSiSi
PolarityPNPPNPPNPPNPPNP
Maximum Collector Power Dissipation (Pc)0.3 W0.3 W0.3 W0.3 W0.28 W
Maximum Collector-Base Voltage | Vcb |45 V45 V45 V45 V45 V
Maximum Collector-Emitter Voltage | Vce |45 V45 V45 V45 V45 V
Maximum Emitter-Base Voltage | Web |5V5V5V5V5V
Maximum Collector Current | Ic max |A 0.1A 0.1A 0.1A 0.1A 0.1
Max. Operating Junction Temperature (Tj)150 ° C150 ° C150 ° C150 ° C150 ° C
Transition Frequency (ft)130 MHz130 MHz130 MHz130 MHz130 MHz
Capacitance Collector (Cc)6 pF6 pF6 pF6 pF6 pF
Forward Current Transfer Ratio (hFE), MIN701201805075
Package Retro American Diner Chair TO92 Retro American Diner Chair TO92 Retro American Diner Chair TO92 Retro American Diner Chair TO92 Retro American Diner Chair TO92

Technical characteristics of BC258, BC258A, BC258B, BC258C, BC258VI

Technical specificationsBC258BC258ABC258BBC258CBC258VI
Material of TransistorSiSiSiSiSi
PolarityPNPPNPPNPPNPPNP
Maximum Collector Power Dissipation (Pc)0.3 W0.3 W0.3 W0.3 W0.3 W
Maximum Collector-Base Voltage | Vcb |25 V25 V25 V25 V25 V
Maximum Collector-Emitter Voltage | Vce |25 V25 V25 V25 V25 V
Maximum Emitter-Base Voltage | Web |5V5V5V5V5V
Maximum Collector Current | Ic max |A 0.1A 0.1A 0.1A 0.1A 0.1
Max. Operating Junction Temperature (Tj)150 ° C150 ° C150 ° C150 ° C150 ° C
Transition Frequency (ft)130 MHz130 MHz130 MHz130 MHz130 MHz
Capacitance Collector (Cc)6 pF6 pF6 pF6 pF6 pF
Forward Current Transfer Ratio (hFE), MIN707012038075
Package Retro American Diner Chair TO92 Retro American Diner Chair TO92 Retro American Diner Chair TO92 Retro American Diner Chair TO92 Retro American Diner Chair TO92

Technical characteristics of BC259, BC259A, BC259B, BC259C

Technical specificationsBC259BC259ABC259BBC259C
Material of TransistorSiSiSiSi
PolarityPNPPNPPNPPNP
Maximum Collector Power Dissipation (Pc)0.3 W0.3 W0.3 W0.3 W
Maximum Collector-Base Voltage | Vcb |20 V20 V20 V20 V
Maximum Collector-Emitter Voltage | Vce |20 V20 V20 V20 V
Maximum Emitter-Base Voltage | Web |5V5V5V5V
Maximum Collector Current | Ic max |A 0.1A 0.1A 0.1A 0.1
Max. Operating Junction Temperature (Tj)150 ° C150 ° C150 ° C150 ° C
Transition Frequency (ft)130 MHz130 MHz130 MHz130 MHz
Capacitance Collector (Cc)6 pF6 pF6 pF6 pF
Forward Current Transfer Ratio (hFE), MIN70120200380
Package Retro American Diner Chair TO92 Retro American Diner Chair TO92 Retro American Diner Chair TO92 Retro American Diner Chair TO92

Bibliography:

http://www.link2nano.ro
https://alltransistors.com/
Thanks also to my colleague Nicholas Dicu for macro pictures.

74 comments

    1. Indeed, most semiconductor factories are in Asia. Due to the lack of electronic components on the Asian market, we have seen plans to build several semiconductor factories in Europe as well. I think that Romania is also included in this project.

    2. They all made big mistakes by transferring all the world's industries to Southeast Asia. You can see how well they are doing, based on what they produce.

          1. I don't even know if there was another green transistor besides BC251. When I saw a green one, I automatically considered it BC251.

      1. I built a stable with new 547 BCs and after a mistake they fried. I put 171 Romanian BCs and they never fried the same mistake. They were warm but good. I bought from someone about 300 Romanian BCs to have, at the first opportunity 😅

        1. Interestingly, it means that Romanian BCs are more reliable than those produced today. Okay, but I don't know what to say about those gray capacitors produced by IPRS. It was kind of a disaster for me.

          1. And those high-voltage metal ones used in TV for horizontal deflection and disaster, and then I didn't have capacitors like now. We were looking at the way and we didn't know what it had, we just knew that the transistor is good and resistant.

          2. I think I will keep the Romanian transistors in the collection aside, I will no longer consider them as interchangeable with newer transistors bought for 0.6 bani a piece.

  1. Unfortunately, the alphabets with BC batches have mysteriously "disappeared" from the Aquarium offices. The aquarium being one of the buildings of the former IPRS BANEASA. I only came into possession of a few images with these first batches of transistors produced from a series in IPRS, implicitly in Romania.

  2. The discussion is vast. The transistors were licensed, they had to have some catalog parameters, sometimes they were better, otherwise you couldn't write on them ITT, SGS, Siemens and so on.

      1. Everything was stolen, the components copied, the Gloria radios after Grunding, TV Sport after Elin Austria, TV Venus after Philips, the "Ideal" vacuum cleaners after Super Austria. We haven't done anything, we've stolen since the world began, we can't even make toothpicks.

        1. Several neighboring countries encapsulated IPRS structures under their own name. For example. Hungary, Bulgaria, Slovakia, even the GDR. The components have been licensed. They were not stolen!

        2. You are very right. Everything is done after others and morally outdated. That was all. That's why they all fell after the revolution. And then the hiring was done by piles and belonging to the PCR. All IPRS machines / installations were purchased from the Japanese.

          1. From the Americans. You also do not inform yourself before posting and you write nonsense.

        3. IPRS was made on the idea of ​​the Russians stealing technology from the West with the help of the Romanians. Later, Ceausescu realizes the importance of electronics and so electronic electronics grows in Romania. Electronic components were stolen, devices were copied. Romania has never supported research in any field, and the faculties have generally only produced engineers by name.

        4. Industrial espionage was at its peak in parallel with the purchase of licenses. If they weren't French, we wouldn't have integrated circuits made in Romania. Yes, theft was a practice, and I say that.

        5. Wrong. Gloria was copied from ITT Schaub-Lorenz, TV Venus after a French model E47. The Romans even kept the name of the French chassis. TV Sport together with the other types of black and white TV with 3, 4, 5 and 6 but were inspired by a black and white Loewe model. The schemes were good but the poor quality of the Romanian electronic components made these devices malfunction.

        6. You're wrong. The Glorias were made after Schaub Lorenz, not after Grundig. The Venus televisions and everything contained in the E47 chassis were taken from the French. Before posting, inform yourself, so you don't write nonsense.

    1. Sorry sir, you got the hang of it. Part of the production was destined for export (as payment for the license). If you mark a product with a sandard name (2N3055, BC 109, TCA 150) you must follow the parameters. The rest of the components are SDT, ST, etc. erau with other parameters.

  3. I worked in IPRS, I did School in IPRS for various. I know the technology and silicon structures used up to 89.
    The technology (manufacturing license) was (silicon, 2400, 2500), import materials, import grids, import silicon, import chemistry.

  4. If you tell us why the one in the middle is green and why the others are not, I give bonus images of kits for articles that the site does not yet have

    1. Good question. I kept asking, and among the answers was that they were used in automation systems and that they were actually used to distinguish PNP transistors.
      Personally, I think this BC171A (green) switches faster than the other variants, that's probably why it has golden pins.

  5. The reason is simpler.
    Initially, green resin manufacturing technologies were imported.
    The materials needed in the recipe were 2-3 times more expensive, the black resin being cheaper.
    It was soon resorted to using only black resin.
    However, of the export lots, many are green. Especially those for the FRG, Israel, etc.

      1. Or for the military, AMC, research. Anything was special and required quality (they put). That was until the party started. Vatasescu did not have a beneficial influence. All the IPRS people say it.

          1. There is much to say. I reproduce from what an IPRS colleague wrote, during the visit in the image.
            "Iliescu, Roman and Vatasescu destroyed our Enterprise! We were many of us who enjoyed the" visit "! We thought we would get good contracts, that it would be good!
            But he sold us money, our dear factory!

            Petre-Roman-in-visit-at-IPRS-Baneasa

  6. IPRS had everything it needed in '89 to be the leader in the semiconductor market in Europe, but comrade Iliescu and Nastase took care to dust everything off. They destroyed everything that was number one in Europe, and not only, to bring Romania into its current situation. Some unfortunate party activists and security guards got rich on the backs of the poor Romanian people, who suddenly became consumers, and that's it. Only by licking the relics did we remain world leaders.

  7. Electronic components at the time were produced under license. You were not allowed to mark with 2N3055 or BC 107 if you did not produce identical to those produced by major companies in the world. At that time, the components produced by IPRS Băneasa were superior to the Soviet and Chinese components.

  8. They all fell in the revolution, because stone by stone was stolen in this country. China has risen (not to mention Japan) by stealing technology and look where they have come. Were we bothered by a few electronics factories now in this semiconductor crisis?

  9. Good bad guys, stolen from others, we exported to America, to Japan, countries with tradition. Now what are we doing? We take all the scraps from others !!

  10. What did they develop, the ebonite housing with wires, and the top? The microfilms for the manufacture of the silicon structure were from SGS. I didn't invent hot water, I just painted the faucet.

        1. The real technological level of the RSR was the UT650 tractor and the Dacia1300. If you don't understand this, it's a bit difficult with geopolitical economics.

          1. Let yourself now have the technological level as your soul desires! And here we are talking about electronics and hobbies, not economics and geopolitics.

  11. The BC series transistors were very competitive and I want to say that the gentleman who claims that everything was stolen is a b ** !!

    1. Thank you for resembling me, no one says they were not competitive, I still replace BCs in assemblies, component theft was a practice in the communist states, I had many delegations to IPRS and I saw with my own eyes what it was there, especially the GDR was a big supplier of stolen components from the west so sir I tell you B *** e so I don't offend you, I suggest you put your PCR membership card in c ** (sorry for the expression) and don't forget that this site is for expressing your opinions, not to offend anyone, and in the end, sir, those times are over, maybe that's why I had to become B **. I leave it to your appreciation of those who read this comment if I deserve such a qualification.

  12. Indeed, no one deserves such qualifications. My opinion is that there are probably many unknown associates or a bad opinion, hatred for voting with the wrong person in those days. Probably not then, but now the consequences are drawing.

  13. As usual for communist controlled states with restrictions from both sides over Iron Curtain - no proper specs and manufacturing technologies was known in communist side. So guys rely only on stolen western documentation and needed to improvise. In the USSR it was the same 🙂

    1. Very well said. It is what actually happened also in Romania, being on that time politically controlled / guided by USSR. What you've said is reflected after the revolution from 89 (Romania), when the factory was gone.

      1. Totally wrong. Many licenses have been purchased. It started with Philips, SGS, TFK.
        There is nothing to ponder about what man abuses. What IPRS produced has nothing to do with the Soviets, we are (well, now in the past, we were the only ones in the communist bloc who produced massively in full accordance with Western standards).
        I can't say how many transistors produced at IPRS were marked in the series produced by other countries, France, Japan as a tribute to the granting of licenses.
        I don't care if someone from outside comes and says that we and the Soviets stole.
        They all stole, but where there is evidence that licenses were bought and actually produced under them, for decades there is no room for blah blah.
        When you read "IPRS Monograph and History", you will be clarified with several aspects.
        It took me two weeks to read the print, in pdf format, please .. it was still undergoing changes, and things are very well documented by IPRS engineers, people who are still in special positions today.
        Unfortunately, outside of Romania, it was a pile of garbage. So, don`t sell out for nothing.

        1. Yes, licenses were bought but the standards were not respected, that's what the man says.
          Leaving the documents aside, if the deliveries were over the size of the factory, most likely parts were delivered that had to be rejected (line reject).
          It is unknown at this time what he will do after leaving the post.
          Personally, I think that was the moment when the contracts were lost.

    2. For further research there was an article in Electronics Today International back in 1985. Silicon transistors were hard to produce until the invention of the planar process by Fairchild in 1962. A further refinement was the epitaxial layer process later on.

  14. The contracts were lost due to the increase in sales prices, precisely in order to lose the partnership with the companies that needed these products.
    Get cheaper from China, IPRS ones are more expensive. The junk went to the Kits and the Gypsies from the Academy.
    What was for export was of very good quality. I say this and those who worked in the factory and the proof are the components of the export batches they own.

    1. There are many factors to consider here.
      1. Who buys expensive and stupid?
      2. The Chinese have a different culture and self-respect. Their production may not be extraordinary, but at least it warns customers with problematic batches.
      3. Too little junk went to kits or gypsies from the Academy to justify what was said earlier.
      4. How much was required and how much had to be delivered?
      5. How often was maintenance done and what was the production capacity of the factory per day?
      6. How well did the testers work? How were they controlled?
      7. What was the performance of the quality department?
      8. What was the quality department doing?
      9. Why were the export specifications not mentioned in the catalogs?
      10. What was the level of IPRS entry into Western Europe?
      and so on

      1. You have to read the books. There are the documents. There are answers to some of the points you made.
        I am partially responsible, although I am not the IPRS spokesperson, and whoever worked in IPRS is no longer with us.
        2. The Chinese are one, in the picture here and another in reality. Mixing their traditional culture with economic espionage is a big mistake, believe me I had to deal with them and there is nothing in candy pink. I am referring to the level of engineering and execution.
        3. They were leaving enough. It recycles quite a lot. But all the factories did the same thing. Just don't think that TFK, SGS, Siemens, TI, and others had no scraps.

  15. IPRS BANEASA: Norms and product quality assurance department.

    As Mr. Dan Florian Alx rhetorically asks if IPRS has owned a department in this regard.

    IPRS PRODUCT QUALITY ASSURANCE SECTION Băneasa

    A condition for the survival of an enterprise that produces electronic components with complex technologies is the existence of an efficient quality system at all stages of the production process. This means overcoming the old concept of quality, which consists only in the conformity of a product with a norm or a
    standard, through tests performed on the final product and the introduction of the concept of Quality Engineering. The high value of investments in technologies, the high cost of raw materials and the production process make it necessary to analyze and evaluate the quality in technological stages and to take out of production - along the way - all
    potentially unsuitable components. This means placing checkpoints along the entire technological line, breaking down product rules into technological phases, developing specific test methods, gathering and processing information in real time, creating databases and establishing the necessary measures.

    The 1960s and 1970s were the days of consumer electronics to which the components produced under the purchased licenses corresponded perfectly.

    The 1970s and 1980s were the days of professional electronics, which required more advanced components.

    One of the first measures taken at IPRS Băneasa, on this line, was the establishment in 1976 of the Screening Laboratory. The screening consisted of a sequence of significant mechanical and climatic tests, which highlighted through rapid evaluation tests the reliability of a certain batch and allowed the elimination of potentially defective components. The experience gained in IPRS Băneasa allowed, at that time, the compilation of a library of characteristic defects and associated failure mechanisms, a very important activity throughout the chain from research and design to the current manufacture of each product.
    3 quality levels for professional applications have been arbitrarily defined for the purpose of electronic devices:
    - applications in which maintenance and repairs can be performed quickly, and downtime is not a critical factor;
    - applications where maintenance and repairs can be performed, but are expensive;
    - applications where maintenance and repairs are very difficult or impossible, and reliability is imperative.
    These quality levels, in accordance with the international quality standards for professional components - CEI, MIL-SDT, etc. generated:
    Component quality assurance program at each quality level and
    The quality control program, also specific to each level;

    The transition from standard to professional component manufacturing a
    was done in stages:

    - first by sorting the components of the current production by destinations;
    - current and special products;
    - and then the transition to the production of special components.

    At all stages the screening was a real help. Historically speaking, to address the issue of professional components, they have
    a few preliminary steps were taken. Initially, specially sorted components were delivered, which ensured a superior quality of conformity
    normal components, through special sorting and quality control programs.

    The program for the development of these components, was called the Yellow Program, it ensures the components a quality at the reception, a stability of the parameters in operation and a superior reliability compared to the normal components.

    Manufactured components have been delivered under the Yellow Program since 1977
    on the most evolved and stable production lines of the enterprise.

    The Yellow program was a hybrid program, more advanced than the one for the normal components, but below the first professional level. In parallel, in 1976 the research began and later the assimilation of PROFESSIONAL COMPONENTS.

    The quality assurance program of the professional components presented some common points, independent of the type of technology, as follows:

    1. Technological measures designed to achieve superior quality, which involved not only product research and design but also the provision of superior technologies (purity of atmosphere and fluids, calibration, and regulation of equipment);

    2. 100% post-encapsulation selection methods for the removal of potentially defective specimens from the batch, as a result of climatic, mechanical, functional tests, X-ray inspection, etc. being more evolved for high quality levels;

    3. Documentation and analysis of data for diagnosis and remediation of defects.

    From 1979 - 1980 IPRS Băneasa started the assimilation and delivered professional components, level I quality assurance (PI), belonging to the main families of low and medium power diodes and transistors (planar, diodes and thyristors).

    The assimilation of the upper levels P II and P III was a political decision due to the need for additional investments in the flow of production and control.

    But the involvement of IPRS in special programs of great national importance - such as the Nuclear Program or the Flight Equipment Program, the Equipment Program
    military, Metro Program, etc. have made it necessary and appropriate to address P II and P III quality levels. There were 9 different special programs.

    1. Nothing came on the market (or to certain beneficiaries in the case of special products) without approval, which involved passing all categories of tests (mechano-climatic, etc.), categories that were standardized by Western standards (especially) or the requirements of the beneficiaries (for certain programs mentioned above). The investments were large (the vast majority of installations (climate chambers, AMCs, etc.) were imported, especially from the west!)

    2. Interestingly, the quality control seemed to be pretty good. It means that there were other reasons for the sudden evaporation of the factory.

      1. The reasons for the sudden evaporation are the highway robbery practiced by the governments of the last 32 years who do not care about the country and the people, they sell everything to fill their own pockets, the rest in the garbage.

    3. I had an interesting experience with the 741 integrated IPRS. I designed a two-piece scheme, the device was to equip the coaches. In "hot" everything worked perfectly, but in the tests at negative temperatures (0… -40 ° C) the two integrated ones cracked. I bought, through acquaintances, from abroad, (for which I was poured into security, the deed and other complaints appear in my information file "Electronist") some pieces with which I did tests and everything was OK. Through intervention at the ministry, for mass production, those integrated in the military version were obtained.

      1. The normal ones were for at most -25C! There is a (American) sorting installation that measures almost all possible parameters when integrated (programmable, with computer, etc.). In order to speed up the sorting process, only a few parameters were measured for the usual large series. Only those with "dots" (white, yellow, etc.) "benefit" from more.

  16. I see that even now there are some who throw away the dirt in what happened in Romania. They're probably from the group of professional denigrators.
    I worked for a long time with semiconductors manufactured at IPRS and I was satisfied with them. They were better than those made in the USSR and even better than some in the GDR. For example, the integrated TDA440P from IPRS was significantly better than its RDG-ist equivalent (A240D). The Germans did not control the broadcasts well and the side pnp transistors in their circuits had too little beta. The A240D does not operate the RAA control circuit that controls the channel selector.

    I bought the first BC - IPRS in the autumn of 1971, for 18 lei, from someone who was in contact with the businessmen from Bucharest. I burned it quickly, because I had no experience or equipment (multimeter and soldering gun).

    1. I also worked for many years with Romanian transistors. Good up to a point. If you took a series of BC107 transistors, for example, and tested 100 pieces, damn if you found two identical, two with the same beta. On the other hand, I didn't have such problems with Philips. Almost all of the tested series, identical. Or with very small differences. The same with ST, SGS, etc.

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